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碳化硅的半导体器件潜力已为人所知多年。
The semiconductor device potential of silicon carbide has been known for many years.
现在,碳化硅已成为一种重要的工程材料。
Now, silicon carbide has become an important engineering materials.
GTAT在新罕布什尔州哈德逊市的主要工厂生产碳化硅材料。
GTAT produces silicon carbide materials at its primary facility in Hudson, New Hampshire.
我们NTK致力于研究,开发和生产高性能碳化硅产品。
And we, NTK, is committed to the research, development and production of high-performance silicon carbide products.
SSiC(烧结碳化硅)和SiSiC(硅渗透碳化硅)变种已经证明了自己。
The variants SSiC(sintered silicon carbide) and SiSiC(silicon infiltrated silicon carbide) have established themselves.
的纳米级碳化硅粉体的应用短时间不可能形成规模经济。
The application of nano-sized silicon carbide powder is unlikely to form economies of scale in a short time.
另外,热压碳化硅陶瓷抗多次打击能力也得到提高。
In addition, hot-pressing silicon carbide ceramic anti-multiple strike capability has also been improved.
对于特殊应用,绿碳化硅生产了一批先进的过程。
For special applications, silicon carbide is produced by a number of advanced processes.
碳化硅能够为相关的产品提供更高的能效和功率密度。
Silicon carbide can provide higher energy efficiency and power density for related products.
这些行星的中心很可能由碳化硅或碳化钛组成。
The centres of these planets would probably consist of silicon carbide or titanium carbide..
十多年来,公司已开发制造了再结晶碳化硅产品。
For more than a decade LiqTech has manufactured products of re-crystalized silicon carbide.
此外,碳化硅半导体还有的固有的强抗辐射能力。
In addition, silicon carbide semiconductors have inherently strong resistance to radiation.
年,能源和钢铁是碳化硅的最大应用领域;
Energy and steel were the largest end-use application sectors for SiC in 2013;
然而,碳化硅的弯曲强度只有451Mpa,材料较脆,耐冲击性差。
However, the bending strength of silicon carbide is only 451Mpa, the material is relatively brittle and the impact resistance is poor.
绿色碳化硅包含超过99%的SiC,并具有良好的自锐性。
(2) Green silicon carbide contains more than 99% SiC and has good self-sharpening.
贝尔纳尔先生和他的团队发现C60来自星云中的碳化硅尘埃。
Mr Bernal and his team discovered that the C60 was derived from the silicon carbide dust in nebulae.
科学家们将碳化硅与氢气应用到其表面作为参考。
The scientists used silicon carbide with hydrogen applied to its surface as a sample.
(2)绿碳化硅含有97%以上的SiC,并具有良好的自锐性。
(2) Green silicon carbide contains more than 99% SiC and has good self-sharpening.
元件温度高达1625°C(2927°F)的碳化硅(SiC)加热元件。
Silicon carbide(SiC) electric heating elements are functional up to 1625°C(2927°F.
西格里集团是碳纤维增强碳化硅(C/SiC)材料研发领域的先驱。
SGL Group is a pioneer in the development of the material class carbon fiber-reinforced silicon carbide(C/SiC.