It has been clarified that impurity doping at ppm level improves the fill factor and short circuit current density due to the increase of majority carriers and the increase of built-in potential.
They were able to efficiently extract electrons and holes formed by exposure to light, and succeeded in increasing the short-circuit current density to more than 21 mA/cm2.
Consequently, they were able to efficiently extract electrons and holes formed by exposure to light, and succeeded in increasing the short-circuit current density to more than 21 mA/cm2.
Figure 8. Short-circuit current pulse in modified hot-swap controller circuit. The backplane power source disturbance is minimized by this technique as shown in Figure 9 where peak voltage disturbance is<±500mV on the +12V source described in the Test Methods section.
The reason the limits were revised is because additional electrode configurations such as VCBB used in the testing revealed that arcs can sustain at much lower short-circuit currents than previously presented in the 2002 standard.
Next, the typical current value for short-circuit detection can be calculated: As previously shown, the minimum and maximum values for the short-circuit current-detection window lie between ISC(MIN) and ISCMAX.
In contrast with the above, MP50 is a new tool that speedily measures and visualizes efficiency distribution of short-circuit current density directly correlated with PV cell efficiency and resultantly verifies high and low areas of conversion efficiency, which leads to quality improvement, production process improvement and manufacturing cost reduction of PV cells.
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