영어에서 An oxide 을 사용하는 예와 한국어로 번역
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According to Embodiment 6, a protective circuit is formed using a non-linear element including an oxide semiconductor; thus,
실시예 6에 따르면, 산화물 반도체를 포함하는 비선형 소자를 사용하여 보호막이 형성되고; According to the sixth embodiment, the protective film is formed using the non-linear element including an oxide semiconductor; 따라서,c, d, e, f, g At 0), an oxide of 2g>3a+3b+2c+4d+3e+2f is satisfied.
the oxide semiconductor film including a crystalline region has favorable crystallinity as compared to an oxide semiconductor film which is entirely amorphous,
댕글링 본드 등에 결합되는 수소 등의 불순물이 저감된다., An oxide semiconductor film including the crystal region,Using artificial method to produce an oxide film(Al2O3) on the surface of aluminum and its alloy products, and different colors are
Know what is meant by an oxide.
Lt;Short channel effect in a transistor including an oxide semiconductor>
Lt;산화물 반도체를 사용한 트랜지스터에서의 쇼트 채널 효과> <Short-channel effects in a transistor using an oxide semiconductor>This film is an oxide that protects the steel from attack in an aggressive environment.
이 보호 피막은 강철을 공격적인 환경에서 보호하는 산화물입니다.The nc-OS is an oxide semiconductor that has higher regularity than an amorphous oxide semiconductor.
Nc-OS층은 비정질 The standards feature an oxide step on a 200mm Si wafer.
표준사항은 200mm Si 웨이퍼 상의 산화 스텝을 선보입니다.The nc-OS is an oxide semiconductor that has high regularity as compared with an amorphous oxide semiconductor.
Nc-OS는 비정질 산화물 반도체에 비하여 규칙성이 높은 The a-like OS is an oxide semiconductor having a structure between the nc-OS and an amorphous oxide semiconductor.
A-like OS는, nc-OS와 비정질 산화물 반도체 사이의 구조를 갖는 The transistor 560 including a material which is not an oxide semiconductor can operate at a high speed.
산화물 반도체가 아닌 재료를 포함하는 트랜지스터(560)는 고속으로 동작할 수 있다.The nc-OS film is an oxide semiconductor film that has higher regularity than an amorphous oxide semiconductor film.
Nc-OS막은 비정질 The nc-OS film is an oxide semiconductor film that has high regularity than an amorphous oxide semiconductor film.
Nc-OS막은 비정질 The standards feature an oxide step on a silicon die mounted on a quartz block.
표준사항은 쿼츠 블록에 탑재된 실리콘 다이 상의 산화 스텝을 선보입니다.Furthermore, the CAAC-OS can also be referred to as an oxide semiconductor including c-axis aligned nanocrystals(CANC).
또한, CAAC-OS는 CANC(c-axis aligned nanocrystals)를 포함하는 산화물 반도체라고 할 수 있다.The nc-OS film is an oxide semiconductor film that has high regularity as compared to an amorphous oxide semiconductor film.
Nc-OS막은 비정질 산화물 반도체막에 비하여 규칙성이 높은 Beginning with start step 240, an oxide layer is grown or deposited on a semiconductor wafer, step 245, such as a silicon wafer.
도 70을 참조로, 시작 단계 240으로부터 출발하여, 실리콘 웨이퍼와 같은 반도체 웨이퍼 위에 산화물 층을 성장 또는 침착시킨다(단계 245).This results to where the chemical bond between the glass and an oxide formed on the metal components strengthens the match seal. Compression Seals.
이것은 유리와 금속 부품에 형성된 산화물 사이의 화학적 결합이 매치 씰을 강화시키기 때문입니다. 압축 씰.Note that such a compound semiconductor or an oxide semiconductor can be used for not only a channel portion of the transistor
이때, 이들의 화합물 반도체 또는 산화물 반도체를, 트랜지스터의 채널 부분에 사용할 뿐만 아니라,
