Examples of using Mosfets in English and their translations into Chinese
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Of both the high-side and low-side MOSFETs is.
发生在两个高侧和低侧MOSFET作为.An XOR gate can be constructed using MOSFETs.
异或门可以用MOSFET组成。Long-term reliability is already a hallmark of SiC MOSFETs.
长期可靠性已经成为SiCMOSFET的标志。Cree SiC MOSFETs help drive Japan's solar infrastructure.
科锐SiCMOSFET助力日本快速增长的太阳能基础建设.Make sure your MOSFETs are logic level and not standard.
确保您的MOSFET是逻辑电平，而不是标准。Power MOSFETs, including N-channel, P-channel, and complementary MOSFETs for power conversion and switching circuits.
功率MOSFET，包括N沟道、P沟道和互补MOSFET，用于电源转换和开关电路。They suspect that the higher temperature caused the MOSFETs to breakdown.
他们怀疑较高的温度导致MOSFET击穿。Before setting up the circuit, let's talk about MOSFETs.
在设置电路之前，我们先讨论一下MOSFET。They are a global leader in Discretes, Logic and MOSFETs devices.
Nexperia是分立、逻辑和MOSFET器件领域的全球领导者。They are a global leader in Discretes, Logic and MOSFETs devices.
安世是分立、逻辑和MOSFET器件领域的全球领导者。Begin by defining which pins will be used to control the MOSFETs.
首先定义要使用哪些引脚来控制MOSFET。They include the inductor, dc/dc regulator, MOSFETs, and the supporting components.
该器件包括了电感器、DC/DC稳压器、MOSFET和支持性组件。The mosfets directly pull from a low voltage dc source(such as a battery).
MOSFET直接从低电压直流电源（如电池）中拉出。Still, there are several ways to make the switch from IGBTs to SiC MOSFETs.
不过，有几种方法可以实现从IGBT到SiCMOSFET的转变。More accurate control on the PWM signals that drive the inverter MOSFETs enables better output-voltage control.
对驱动反相MOSFET的PWM信号进行更精确的控制能够实现更出色的输出电压控制效果。The LTC3119 includes four internal low RDSON N-channel MOSFETs to deliver efficiencies of up to 95%.
LTC3119包含4个内部低RDSONN沟道MOSFET，以提供高达95%的效率。Self-protected MOSFETs that may include current limiting, temperature limiting, ESD protection, or a current mirror.
安森美半导体提供自我保护MOSFET，可能包含限流、限温、ESD保护或电流镜。SiC MOSFETs and SiC Schottky Barrier Diodes(SBDs) ensure maximum switching efficiency at high frequencies.
SiCMOSFET和SiC肖特基势垒二极管（SBD）确保在高频下具有最高的开关效率。SiC MOSFETs and SiC Schottky Barrier Diodes(SBDs) ensure maximum switching efficiency at high frequencies.
SiCMOSFET和SiC萧特基二极管(SBD)确保在高频具有最高的转换效率。That's where the industry is targeting SiC MOSFETs, which have faster switching speeds than IGBTs.
这就是业界瞄准SiCMOSFET的原因，SiCMOSFET比IGBT具有更快的切换速度。
