The ripple current of an output capacitor is a sawtooth wave, as indicated by ICO in the waveform diagram above; its effective value can be represented by the following equation.
The first term in the next equation is Coulomb's law for a pair of ions, the second term is the short-range repulsion explained by Pauli's exclusion principle and the final term is the dispersion interaction term.
IKLと大地雷撃密度Ng(年間1平方km当たりの落雷回数)との関係の一例は次式で示されています。
One example of the relationship between IKL and the ground lightning strike density Ng(number of lightning strikes per square meter per annum) can be expressed in the following equation.
The following formulas express the heat transfer surface area of mold coolant channels required to control mold temperature(negating any heat transfer that may take place by way of mold plates, nozzle contact or heat release into the atmosphere).
In the capture process, the trap concentration of captured electrons changes exponentially with respect to the pulse width and is given by the following formula(A-13).
For expressing this wide dynamic range,"sound pressure level," defined in the following equation, is often used: where p is the sound pressure of the interest, p0 is the reference pressure of 20 ƒÊPa, and the unit is the decibell dB.
Detail of a typical step-down MOSFET current waveform for the purpose of accurately estimating MOSFET conduction losses. The following equation more accurately predicts losses for a ramped waveform by replacing the simple I2 term with the integral of I2 between IP and IV.
When the blocking signal has a Gaussian-noise-like normal distribution, the power of the resulting cross-modulation product can be estimated using the following formula: In the case when the input signal is also modulated, the shape of the output product is the convolution of a triangle and the signal-power spectral-density function.
The following equation determines the threshold in this configuration: Just before the threshold is reached, the impedance seen by the PREF pin is the parallel combination of R1 and R2, because both are connected to GND at that time.
The following equation shows how this works for two currents, IH and IL. where ΔVBE is the difference in base-emitter voltages at both currents, IH is the higher forcing current, and IL is the lower forcing current.
The worst-case steady-state dissipation is calculated with the following equation: At a 15A load current and a 9mΩ on-resistance, the Si7485DP operates 40°C to 50°C above the ambient temperature, so additional heat sinking is required according to the final application.
The THD depends on multiple factors and is thus hard to quantify, but assuming a 10% variation in RON, the following equation can be used as a rough approximation: As a general rule, the higher the nominal digiPOT resistance(RPOT), the better the THD, as the denominator is larger.
We can then deduce the required LO phase noise using the following equation: The maximum interference power noted in the blocking and two-tone intermodulation test cases is a -46dBm tone at±3.2MHz offset from the desired signal center frequency.
Calculation of dynamic equivalent load Dynamic equivalent loads for radial bearings and thrust bearings(α≠90°) which receive a combined load of a constant magnitude in a specific direction can be calculated using the following equation, When Fa/Fr≦e for single-row radial bearings, it is taken that X=1, and Y=0.
The following formula can be used to calculate the required power dissipation for the switching transistor: Where tRISE is the transistor switch rise time; tFALL is the transistor switch fall time; T is the PWM period; tON/T is the PWM intensity level; I is the total LED port current; and RON is the transistor's on-resistance.
English
中文
عربى
Български
বাংলা
Český
Dansk
Deutsch
Ελληνικά
Español
Suomi
Français
עִברִית
हिंदी
Hrvatski
Magyar
Bahasa indonesia
Italiano
Қазақ
한국어
മലയാളം
मराठी
Bahasa malay
Nederlands
Norsk
Polski
Português
Română
Русский
Slovenský
Slovenski
Српски
Svenska
தமிழ்
తెలుగు
ไทย
Tagalog
Turkce
Українська
اردو
Tiếng việt